New SODDB3/ SODDB3T DIACs (bi-directional trigger diodes) have been released.

These DIACs offer a reverse breakover voltage (VBO) of 32 V and a maximum power dissipation (PD) of 400 mW.

Based on planar process technology the leakage current is measured
at <1 µA (IR<10µA@VB=½VBO) with a stable high temperature performance.

Available in wire-bonded gull-wing SOD-123 package they are ideally…

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Lextar Electronics extends its Product Line with the new Flip Chip COB, “Polaris”, and has now deployed the widest COB product line in the industry.

Besides the common advantages of the COB Line, CRI values of 80+ and 90+ for all power ranges and Hot Color Targeting, the Polaris Series bears better over-drive capability and intensifies product stability by using ceramic substrate. It also…

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The new 600/700 V N-Channel Power MOSFETs in Super-Junction technology with RDS(on) of 0.75 and 1.4 O have been launched in TO-251 (IPAK) and TO-252 (DPAK) packages.

Super-Junction Power MOSFETs by TSC offer low RDS(on) and high efficiency.

Features:

• Super-Junction technology
• High performance due to small figure-of-merit
• High ruggedness performance
• High commutation performance

Applicatio…

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The Trench Schottky technology patented by TSC offers excellent high temperature stability, lower forward voltage drop, and lower power loss for a given silicon surface area.

It offers high energy efficiency and high forward surge capability.

TSC Trench Schottky devices are optimized for low and ultra-low VF (respectively “L” and “U”-type) or low/ultra-low IR (“M”, “H”-type).

The broad…

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SMD fuse with high breaking capacity (UMT-H)

The SMD fuse UMT-H has been extended with 13 additional rated currents and is now offered with a total of 19 rated currents, which covers the rated currents between 160 mA and 10 A. With a rated breaking capacity of 1500 A, this compact SMD fuse is capable of protecting against short circuits, while providing reliable overcurrent protection. The…

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The MOSFET portfolio of Taiwan Semiconductor has been expanded to include various Low Voltage MOSFETs for general purpose application use:

• 30 V N-Channel & -30 V P-Channel MOSFET, SOP-8 package
• -60 V (D-S) P-Channel MOSFET, TO-251S (IPAK) and TO-252 (DPAK) package
• 30~60 V (D-S) N-Channel MOSFET, TO-251S (IPAK), TO-252 (DPAK) and SOT-223 package

These devices are based on a 0.18 µm Trench…

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