Taiwan Semiconductor (TSC) was founded in 1979 in Taipei (Taiwan) and now has over 40 years of experience in the semiconductor market. Today, more than 1.500 employees work for TSC in 13 subsidiaries and 4 production sites worldwide. TSC‘s manufacturing facilities are certified with all current automotive and environmental standards such as IATF 16949, ISO 9001 and ISO 14001. TSC has defined its focus areas as power management, automotive and lighting applications in its core markets of Asia and Europe.
Diodes, rectifiers, transistors, MOSFETs, power management ICs, and LED drivers are produced by TSC. TSC offers high quality products to meet the highest customer expectations. More than 60% of TSC‘s total product line is qualified for the automotive industry (AEC-Q101).
TSC has had a trusted and strong partnership with BECK Elektronik for nearly two decades.
Tabs
Bipolar Junction Transistors / BJT
A Bipolar Junction transistor has either a npn-structure or a pnp-structure and therefore comprises two subsequent pn-junctions. The currents are combined negatively charged electrons and positively charged holes as charge carriers. Bipolar junction transistors are usually used in two different types of applications: switching and amplification.
TSC's Transistor family covers the collector-emitter voltage VCEO from -600V to 450V and a collector current from -3A to 5A in a variety of packages.
Product overview of Transistors of our partner Taiwan Semiconductor (TSC)
![[Translate to English:] Transistor BJT SSD TO-92](/fileadmin/_processed_/a/6/csm_thyristor_transistor-bjt-SSD-TO-92_521244dd19.png "[Translate to English:] Transistor BJT SSD TO-92")
![[Translate to English:] Transistor BJT SSD SOT-323](/fileadmin/user_upload/Produkte/BECK_Elektronik/Aktive_Bauelemente/transistor-bjt-SSD-SOT-323.png "[Translate to English:] Transistor BJT SSD SOT-323")
Tabs
Small Signal Mosfet & Power Mosfet
A MOSFET (Metal-oxide-semiconductor field-effect transistor) is a type of insulated-gate field-effect transistor which is widely used for switching and amplifying signals with the capability to work up to a few hundred KHz.
TSC's Power MOSFET portfolio offers a broad range of breakdown voltages from –60 to 1000 V, with low gate charge and low on-resistance, that means a low Figure of Merit (FOM) combined with state-of-the art packaging such as PDFN.
Product overview of MOSFETs of our partner Taiwan Semiconductor (TSC)
![[Translate to English:] Transistor Mosfet PMD TO-220](/fileadmin/_processed_/3/9/csm_transistor-mosfet-PMD-TO-220_CZ__6fe8ca5785.png "[Translate to English:] Transistor Mosfet PMD TO-220")