The Trench Schottky technology patented by TSC offers excellent high temperature stability, lower forward voltage drop, and lower power loss for a given silicon surface area.
It offers high energy efficiency and high forward surge capability.
TSC Trench Schottky devices are optimized for low and ultra-low VF (respectively “L” and “U”-type) or low/ultra-low IR (“M”, “H”-type).
The broad portfolio is extended to more than 100 parts available in the following packages and covering these ranges:
- Average forward rectified current – IF(AV) range: 0.5 – 60 A
- Repetitive peak reverse voltage – VRRM range: 20 – 200 V
- Instantaneous forward voltage – VF range: 0.37 - 1.05 V
- IR range: 1 – 2000 µA
- Max. operating temperature range: 125°C – 175°C
- Packages: D2PAK (TO-263AA), I2PAK (TO-262), TO-220AB, ITO-220AB, SMPC (TO-277A), SMPC 4.0, SOD-123HE, SMA (DO-214AC), PDFN56
Features:
- Excellent high temperature stability
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- RoHS compliant