The Trench Schottky technology patented by TSC offers excellent high temperature stability, lower forward voltage drop, and lower power loss for a given silicon surface area.

It offers high energy efficiency and high forward surge capability.

TSC Trench Schottky devices are optimized for low and ultra-low VF (respectively “L” and “U”-type) or low/ultra-low IR (“M”, “H”-type).

The broad…

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 ELNA has recently developed "conductive polymer hybrid aluminum electrolytic capacitors", which combined advantages of both aluminum electrolytic capacitors and conductive polymer capacitors.

This new product incorporated the hybrid electrolyte, that blended electrolytic solution (liquid) with conductive polymer (solid) using the unique electrolyte technology.

Features:

• Low ESR, high ripple…

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SMD fuse with high breaking capacity (UMT-H)

The SMD fuse UMT-H has been extended with 13 additional rated currents and is now offered with a total of 19 rated currents, which covers the rated currents between 160 mA and 10 A. With a rated breaking capacity of 1500 A, this compact SMD fuse is capable of protecting against short circuits, while providing reliable overcurrent protection. The…

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The MOSFET portfolio of Taiwan Semiconductor has been expanded to include various Low Voltage MOSFETs for general purpose application use:

• 30 V N-Channel & -30 V P-Channel MOSFET, SOP-8 package
• -60 V (D-S) P-Channel MOSFET, TO-251S (IPAK) and TO-252 (DPAK) package
• 30~60 V (D-S) N-Channel MOSFET, TO-251S (IPAK), TO-252 (DPAK) and SOT-223 package

These devices are based on a 0.18 µm Trench…

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