Taiwan Semiconductor has released a second generation of600 V super junction power MOSFETs.
- Faster, higher efficiency switching performance
- Improved figure of merit
- Faster recovery
The TSM60NBxxx family of 600 V N-channel power MOSFETs offer RDS(on)(max) ranging from 190 mO to 1.4 O.
The advanced and proprietary super-junction technology is specifically designed to resolve the efficiency limitations of high voltage planar MOSFETs by improving the RDS(on) * Qg figure of merit in load switching applications.
Low RDS(on), low gate charge (Qg), and fast reverse recovery performance reduces conduction and switching losses.
A variety of thermally efficient, reliable, RoHS/REACH compliant, and Halogen free packages are available for space-constrained power switching applications.
Features:
- G2 Super-Junction technology
- 100% UIS tested
- Low Gate Charge, Improved FOM
- Fast Reverse Recovery
- RoHS / REACH compliant and Halogen Free Packaging
Applications:
- LED Lighting
- Charger / Adaptor
- SMPS Power Factor Correction
- LLC Primary Side MOSFET
| TSC P/N | Package | VDS (V) |
RDS(ON) max. (O) |
R DS(ON) typ. (O) |
Qg typ. (nC) |
Vgs (±V) |
trr typ. (ns) |
Qrr typ. (µC) |
|---|---|---|---|---|---|---|---|---|
| TSM60NB190CI/CZ /CM2 | ITO-220/TO-220 /TO-263 | 600 | 0.19 | 0.17 | 31 | 30 | 360 | 4.5 |
| TSM60NB260CI | ITO-220 | 600 | 0.26 | 0.19 | 30 | 30 | 347 | 4.2 |
| TSM60NB380CH/CP | TO-251/TO-252 | 600 | 0.38 | 0.26 | 19 | 30 | 272 | 2.9 |
| TSM60NB600CH/CP | TO-251/TO-252 | 600 | 0.60 | 0.45 | 13 | 30 | 233 | 2.2 |
| TSM60NB900CH/CP | TO-251/TO-252 | 600 | 0.90 | 0.69 | 10 | 30 | 186 | 1.4 |
| TSM60NB1R4CH/CP | TO-251/TO-252 | 600 | 1.40 | 1.00 | 7 | 30 | 126 | 0.6 |
