New N- and P-channel power MOSFETs are available in Taiwan Semiconductor’s low- to mid-voltage high performance trench power MOSFET portfolio.
The advanced trench technology is designed with significantly lower total gate charge requirements to reduce switching losses and improve the efficiency of DC-DC converters.
The PDFN33 package provides an ultra-small, thermally efficient 3mm × 3mm footprint, lower RDS(on) as a function of die size, and lower cost which makes it extremely versatile for advanced and efficient surface mount applications.
TSM085N03, TSM180N03 / Typical Applications:
- SMPS Synchronous Rectification
- Networking DC-DC Power System
TSM038N03, TSM060N03, TSM200N03D / Typical Applications:
- Mobile device DC-DC conversion
- Point of load (POL) DC-DC
- Secondary switch rectification
TSM150P03 / Typical Applications:
- Load switching
- Networking
Features:
- 100% avalanche tested
- Low gate charge for fast switching
- Pb-free plating
- ROHS compliant
- Halogen-free mold compound
