New N- and P-channel power MOSFETs are available in Taiwan Semiconductor’s low- to mid-voltage high performance trench power MOSFET portfolio.

The advanced trench technology is designed with significantly lower total gate charge requirements to reduce switching losses and improve the efficiency of DC-DC converters.

The PDFN33 package provides an ultra-small, thermally efficient 3mm × 3mm footprint, lower RDS(on) as a function of die size, and lower cost which makes it extremely versatile for advanced and efficient surface mount applications.

TSM085N03, TSM180N03 / Typical Applications:

• SMPS Synchronous Rectification
• Networking DC-DC Power System

TSM038N03, TSM060N03, TSM200N03D / Typical Applications:

• Mobile device DC-DC conversion
• Point of load (POL) DC-DC
• Secondary switch rectification

TSM150P03 / Typical Applications:

• Load switching
• Networking

Features:

• 100% avalanche tested
• Low gate charge for fast switching
• Pb-free plating
• ROHS compliant
• Halogen-free mold compound