Active Components, BECK Elektronik

SiC MOSFET Modules from Leapers at BECK Elektronik

The E0 series (Fig#1) and E2 series (Fig#2) of silicon carbide (SiC) MOSFET power semiconductor modules from Japan and China-based manufacturer Wuxi Leapers Semiconductor Co, Ltd – "Leapers" for short – are ideally suited for use in the following application areas: Renewable energy, air compressors, industrial frequency converters and uninterruptible power supplies (UPS).

The E0 series (dimension: 63 [L] × 35 [W] × 16 [H] in mm) is available as a 1,200V version in half-bridge, H-bridge, 3-phase and boost configurations, covering a drain current range from 25A to 150A.

The E2 series (dimension: 58 [L] × 63 [W] × 16 [H] in mm) are also available as 1,200V versions, but so far exclusively in the half-bridge and H-bridge configurations in a drain current range from 100A to 200A.

Leapers focusses with great emphasis on high quality products: for excellent product robustness and an operational capability up to Tjmax= 175°C, a combination of a high performance silicon nitride (Si3N4) AMB layer and a special epoxy resin encapsulation in the module is used. Currently, Leapers exclusively uses SiC chips from internationally established manufacturers for the power semiconductor modules.

This high quality standard of Leapers fits perfectly to the long-term strategy of BECK Elektronik – you are invited to learn more about Leapers and the unfolding product range by connecting with us.

For further information, please contact Patrick Beck at Beck GmbH & Co. Elektronik Bauelemente KG by E-E-Mail:leistungshalbleiter@beck-elektronik.de.

SiC MOSFETs from Leapers
Fig#1
SiC MOSFETs from Leapers
Fig#2