The TSM80N950 and TSM80N1R2 800V N-channel power MOSFETs to the high-voltage Super-Junction deep-trench product portfolio.
The advanced Super-Junction technology is specifically designed to resolve limitations of high voltage planar MOSFETs by improving the efficiency of load switching applications.
TSM80N950/TSM80N1R2 offer low RDS(ON) of 950mO and 1.2O respectively and low gate charge Qg requirements for faster switching and lower switching losses. The RoHS compliant and halogen free TO-252 (DPAK) and TO-251 (IPAK) offer small, thermally efficient packages for space-constrained power switching applications. In addition, the TSM80N600 will be released soon which offers an even lower RDS(ON) of 0.6O and is rated to a continuous drain current (ID) of 8A.
Features:
- Super-Junction technology
- High performance due to small figure-of-merit
- 100% Avalanche Tested
- High commutation performance
- High ruggedness performance
- RoHS compliant
- Halogen-free
Applications:
- Power Supply
- Lighting
